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Towards p‐type ZnO using post‐growth annealing
Author(s) -
Dangbeg J. K.,
Roro K. T.,
Botha J. R.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200776828
Subject(s) - photoluminescence , annealing (glass) , oxygen , acceptor , arsenic , nitrogen , chemical vapor deposition , materials science , analytical chemistry (journal) , zinc , substrate (aquarium) , oxide , chemistry , optoelectronics , metallurgy , environmental chemistry , physics , oceanography , organic chemistry , geology , condensed matter physics
The optical properties of zinc oxide (ZnO) films grown by metalorganic chemical vapor deposition on GaAs substrate are investigated. Samples were annealed in two different ambients, namely nitrogen and oxygen, and studied by photoluminescence (PL). Samples annealed in oxygen at 600 °C show arsenic acceptor‐related signatures. The near‐band‐edge emission is dominated by an excitonic feature at 3.355 eV and compensation broadens the spectra. No such changes are observed when similar samples are annealed in nitrogen. The diffusion of arsenic from the GaAs substrate appears to be a source of acceptors. This effect is enhanced in an oxygen atmosphere. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)