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Effect of process conditions on gain and loss in GaN:Eu cavities on different substrates
Author(s) -
Park J. H.,
Steckl A. J.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200776715
Subject(s) - materials science , sapphire , optoelectronics , substrate (aquarium) , silicon , laser , process (computing) , optics , computer science , physics , oceanography , geology , operating system
GaN:Eu laser cavities have been fabricated by MBE growth on several substrates. Gain and loss from Eu stimulated emission have been investigated as a function of several process parameters: Eu concentration, post‐growth anneal and substrate (sapphire, silicon and glass). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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