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Visible and infrared electroluminescence from an Er‐doped n‐ZnO/p‐Si light emitting diode
Author(s) -
Harako S.,
Yokoyama S.,
Ide K.,
Zhao X.,
Komoro S.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200776709
Subject(s) - electroluminescence , doping , light emitting diode , materials science , diode , optoelectronics , excited state , green light , infrared , ion , excitation , laser , blue light , chemistry , optics , nanotechnology , atomic physics , physics , organic chemistry , layer (electronics) , quantum mechanics
Er‐doped ZnO/Si hetero‐junctions have been formed by laser ablating an Er‐contained ZnO target onto p‐Si(100) substrates. Light emitting diodes fabricated by using these samples exhibited bright green (536 nm and 556 nm), red (665 nm) and 1.54 µm emissions at room temperature. A light emission at 1180 nm was also observed. These emissions arose from intra‐4f transitions in Er 3+ ions that were excited by impact excitation process. A threshold voltage of ∼10 V was achieved for emitting multi colors. Our results show a strong possibility of realizing the Si‐based light emitting devices by Er doing. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)