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A comparative investigation of the damage build‐up in GaN and Si during rare earth ion implantation
Author(s) -
Gloux Florence,
Ruterana Pierre,
Lorenz K.,
Alves E.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200776708
Subject(s) - stacking , nanocrystalline material , materials science , fluence , amorphous solid , ion , layer (electronics) , crystallography , surface layer , rare earth , nanotechnology , chemistry , metallurgy , organic chemistry
The medium range implantation of rare earth ions at room temperature in GaN layers leads to the formation of point defect clusters, basal and prismatic stacking faults from the lowest fluence. When a threshold fluence of about 3 × 10 15 at/cm 2 is reached, a highly disordered ‘nanocrystalline layer’ (NL) is observed to form at the surface. This layer is made of a mixture of misoriented nanocrystallites and voids. Beyond this NL, I 1 , I 2 and E basal stacking faults (BSFs) have been identified, as well as in GaN implanted at lower fluences than the threshold. Prismatic stacking faults (PSFs) with Drum atomic configuration connect the I 1 BSFs. A similar investigation of the damage in Eu implanted Si shows a completely different behaviour; in this case, from the relatively low fluence 1 × 10 14 at/cm 2 , amorphization starts in patches at the projected range and extends very rapidly towards the surface and the bulk, to form a uniform amorphous layer already at 2 × 10 14 at/cm 2 . (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)