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Effects of Yb impurity on Er‐related emission in Al 0.70 Ga 0.30 As:Er,Yb epitaxially grown on GaAs substrate
Author(s) -
Arai Tomoyuki,
Uekusa Shinichiro
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200776705
Subject(s) - photoluminescence , materials science , spectroscopy , analytical chemistry (journal) , impurity , annealing (glass) , epitaxy , raman spectroscopy , excited state , atmospheric temperature range , optoelectronics , chemistry , atomic physics , nanotechnology , layer (electronics) , optics , metallurgy , physics , organic chemistry , chromatography , quantum mechanics , meteorology
The effects of Yb impurity on the optical properties of an Er,Yb‐implanted Al 0.70 Ga 0.30 As epitaxial layer were studied. The defect characterizations were carried out for undoped Al 0.70 Ga 0.30 As and Al 0.70 Ga 0.30 As:Er,Yb samples annealed in the temperature range from 500 °C to 900 °C. From results of photoluminescence (PL), Raman spectroscopy and positron annihilation spectroscopy, it was found that the implantation damage in Al 0.70 Ga 0.30 As:Er,Yb samples are recovered by the thermal annealing at a temperature above 700 °C. Maximum PL intensity of Er‐related emission was observed from the Al 0.70 Ga 0.30 As:Er,Yb sample annealed at 800 °C. The energy transfere from Yb 3+ to Er 3+ was also investigated by selectively excited photoluminescence (PL) and PL excitation spectroscopy. It was also observed that the energy was transfered from Yb 3+ to Er 3+ . (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)