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Investigation of Tb‐related green emission in group‐III nitrides by time‐resolved photoluminescence measurement
Author(s) -
Wakahara A.,
Takemoto K.,
Oikawa F.,
Okada H.,
Ohshima T.,
Itoh H.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200776703
Subject(s) - photoluminescence , luminescence , impurity , materials science , energy transfer , emission intensity , intensity (physics) , nitride , band gap , activation energy , optoelectronics , analytical chemistry (journal) , chemistry , molecular physics , nanotechnology , optics , physics , organic chemistry , layer (electronics) , chromatography
Luminescence properties of Tb impurity in AlGaN are investigated various Al composition using time‐resolved photoluminescence (TRPL). When the AlN molar fraction is increased, the luminescence intensity corresponding to inner‐shell transitions in Tb becomes strong. At low‐temperatures, 5 D 3 – 7 F J transitions are dominant in AlN‐rich samples, whereas 5 D 4 – 7 F J transitions are dominant at high‐temperature. Temperature dependence of the transient decay and the luminescence intensity suggest thermally activated energy‐transfer process and suppression of energy‐back‐transfer due to widening of the band‐gap. Therefore, the large improvement of PL capability in AlGaN may be due to increase of energy transfer efficiency and/or increase of active Tb impurity. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)