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Electrostatic force microscopy study of electrical conductivity of hydrogen‐terminated CVD diamond films
Author(s) -
Volodin A.,
Toma C.,
Bogdan G.,
Deferme W.,
Haenen K.,
Neslàdek M.,
Van Haesendonck C.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200776334
Subject(s) - diamond , electrostatic force microscope , materials science , electrical conductor , surface conductivity , conductivity , sheet resistance , electrical resistivity and conductivity , conductive atomic force microscopy , drop (telecommunication) , electrode , hydrogen , voltage drop , composite material , nanotechnology , analytical chemistry (journal) , voltage , chemistry , atomic force microscopy , electrical engineering , layer (electronics) , engineering , organic chemistry , chromatography
Electrostatic force microscopy (EFM) has been used to probe the conducting properties of the hydrogen‐terminated (H‐terminated) surface of CVD diamond films. Two parallel electrodes, separated by a distance of 100 µm, are fabricated on the sample surface. EFM images the voltage distribution over a current‐carrying H‐terminated diamond film. The almost linear voltage drop in highly conductive H‐terminated diamond surface layers indicates that the layers behave as diffusive conductors with a well‐defined value of the sheet resistance. On the other hand, conductive as well as insulating regions are observed to coexist for H‐terminated diamond surfaces with poor electric conductivity. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)