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Deposition of ZnO inclined c ‐axis on silicon and diamond by r.f. magnetron sputtering
Author(s) -
Bensmaine S.,
Le Brizoual L.,
Elmazria O.,
Fundenberger J. J.,
Benyoucef B.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200776322
Subject(s) - wurtzite crystal structure , sputter deposition , materials science , scanning electron microscope , crystallite , diamond , silicon , texture (cosmology) , thin film , nucleation , deposition (geology) , cavity magnetron , zinc , crystallography , nanotechnology , sputtering , optoelectronics , composite material , metallurgy , chemistry , paleontology , image (mathematics) , organic chemistry , artificial intelligence , sediment , computer science , biology
Suitable deposition conditions yielding to thin zinc oxide (ZnO) films with inclined c ‐axis have been determined in this work. These films were deposited on silicon (100) and on the nucleation side of self‐standing diamond substrates. We used r.f. magnetron and a zinc‐oxyde target. We characterized by X‐ray diffraction (XRD) the film texture and by scanning electron microscopy (SEM) the film morphology. XRD has revealed that theses films are polycrystalline in nature having a hexagonal wurtzite crystal structure. We have measured a c ‐axis angle of inclination of 45° in the case of ZnO/Diamond sample. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)