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Tip voltage controlled local modification of hydrogenated diamond surface with an atomic force microscope
Author(s) -
Toma C.,
Volodin A.,
Bogdan G.,
Deferme W.,
Haenen K.,
Neslàdek M.,
Van Haesendonck C.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200776321
Subject(s) - diamond , conductive atomic force microscopy , materials science , voltage , atomic force microscopy , nanotechnology , doping , silicon , optoelectronics , composite material , electrical engineering , engineering
The influence of the voltage applied to the tip of an atomic force microscope (AFM) on the local modification of the surface of CVD‐grown diamond films is studied. By applying a negative voltage to the conductive (highly doped) silicon AFM tip, two kinds of patterns can be created. In the voltage range –6 V to –10 V structures that are elevated with respect to the surface (creation of bumps) are obtained, while at higher voltages (–12 V to –15 V) the patterns are scribed into the diamond surface (creation of pits). The origin of the observed modifications is discussed in terms of an electrochemical process that is enhanced by local heating occurring due to severe current crowding. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)