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Thermionic and tunneling transport mechanisms in graphene field‐effect transistors
Author(s) -
Ryzhii Victor,
Ryzhii Maxim,
Otsuji Taiichi
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200724035
Subject(s) - thermionic emission , graphene , quantum tunnelling , transistor , substrate (aquarium) , field effect transistor , voltage , physics , electric field , quantum nonlocality , poisson's equation , field (mathematics) , condensed matter physics , materials science , nanotechnology , quantum mechanics , mathematics , electron , quantum , oceanography , geology , quantum entanglement , pure mathematics
We present an analytical device model for a graphene field‐effect transistor (GFET) on a highly conducting substrate, playing the role of the back gate, with relatively short top gate which controls the source–drain current The equations of the GFET device model include the Poisson equation in the weak nonlocality approximation. Using this model, we find explicit analytical formulae for the spatial distributions of the electric potential along the channel and for the voltage dependences of the thermionic and tunneling currents. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)