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Acceptor state formation in arsenic‐doped ZnO films grown using ozone
Author(s) -
Erie J. M.,
Ivill M.,
Kim H. S.,
Pearton S. J.,
Gila B.,
Ren F.,
Norton D. P.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723663
Subject(s) - photoluminescence , acceptor , doping , epitaxy , materials science , pulsed laser deposition , arsenic , analytical chemistry (journal) , deposition (geology) , spectral line , thin film , photochemistry , optoelectronics , chemistry , nanotechnology , condensed matter physics , physics , metallurgy , environmental chemistry , paleontology , layer (electronics) , astronomy , sediment , biology
The optical and transport properties of As‐doped ZnO films are examined. The films are grown by pulsed‐laser deposition using As 2 O 3 as the source of As and O 3 /O 2 as the oxidant. The films are epitaxial, single phase, and oriented in the ZnO [002] direction. Low temperature photoluminescence spectra at 20 K show for the formation of acceptor states associated with the As, although Hall measurements indicate that the films doped with 0.2 at% As are n‐type. From the photoluminescence spectra, the binding energy of the As‐related acceptor was estimated to be 155 meV. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)