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Electrical characteristics of temperature‐difference liquid phase deposited SiO 2 on GaN with (NH 4 ) 2 S x treatment
Author(s) -
Lee MingKwei,
Ho ChenLin,
Zeng JiaYi
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723627
Subject(s) - boric acid , materials science , analytical chemistry (journal) , oxide , deposition (geology) , chemical vapor deposition , phase (matter) , diode , sulfide , electric field , liquid phase , chemistry , nanotechnology , optoelectronics , metallurgy , paleontology , physics , organic chemistry , chromatography , quantum mechanics , sediment , biology , thermodynamics
The characteristics of a SiO 2 film grown on (NH 4 ) 2 S x treated GaN by temperature‐difference liquid phase deposition were investigated. Hydrofluorosilicic acid and boric acid were used as deposition solutions. For GaN without the (NH 4 ) 2 S x treatment, an Al/SiO 2 /GaN MOS diode shows poor electrical characteristics due to the native oxides existing at the interface. With (NH 4 ) 2 S x treatment of GaN, a stable sulfide‐terminated surface is obtained and the leakage current density of SiO 2 /GaN is improved from 6.15 × 10 –4 A/cm 2 to 2.08 × 10 –5 A/cm 2 at the electric field of 2 MV/cm. The effective oxide charges decrease from 6.09 × 10 11 C/cm 2 to 2.23 × 10 11 C/cm 2 . (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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