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Thermoelectric properties of n‐type Mg 2 Si 0.6– y Sb y Sn 0.4 compounds
Author(s) -
Zhang Q.,
Yin H.,
Zhao X. B.,
He J.,
Ji X. H.,
Zhu T. J.,
Tritt T. M.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723497
Subject(s) - thermoelectric effect , seebeck coefficient , materials science , thermoelectric materials , thermal conductivity , dimensionless quantity , analytical chemistry (journal) , electrical resistivity and conductivity , doping , atmospheric temperature range , figure of merit , hot pressing , metallurgy , chemistry , thermodynamics , optoelectronics , physics , composite material , chromatography , quantum mechanics
The thermoelectric properties of n‐type Mg 2 Si 0.6– y Sb y Sn 0.4 solid solutions with a small Sb‐doping ratio on the Si‐site ( y = 0.0–0.015) were prepared by an induction melting/hot‐pressing method. The electrical conductivity, Seebeck coefficient and thermal conductivity have been measured as a function of temperature from 300 K to 820 K. A power factor ∼2.28 × 10 –3 Wm –1 K –2 at 574 K for y = 0.01, and a dimensionless figure of merit ZT ∼0.68 at 724 K for y = 0.005 are attained. Given the potential of these materials for utilization in thermoelectric devices in a medium temperature range, the thermoelectric compatibility of Mg 2 Si 0.6– y Sb y Sn 0.4 samples has been also addressed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)