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Indium oxide thin film transistors via reactive sputtering using metal targets
Author(s) -
Qijun Yao,
Dejie Li
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723462
Subject(s) - sputtering , materials science , thin film transistor , optoelectronics , layer (electronics) , transistor , gate dielectric , thin film , metal , indium , oxide , dielectric , nanotechnology , electrical engineering , metallurgy , engineering , voltage
Thin film transistors with In 2 O 3 channel were fabricated. The channel layer of In 2 O 3 and gate dielectric of Ta 2 O 5 in the device was deposited by reactive sputtering using metal targets. A thin layer of Bi was deposited on the channel and then an‐ nealed to help stabilize the device performance. The device with optimal dose of Bi exhibited a channel mobility of 12 cm 2 /V s. Effects of Bi layer and influence of gate dielectric to the device performance are investigated. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)