Indium oxide thin film transistors via reactive sputtering using metal targets | Zendy

Qijun Yao | Zendy; Dejie Li | Zendy

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Indium oxide thin film transistors via reactive sputtering using metal targets

Author(s) -

Qijun Yao,

Dejie Li

Publication year - 2008

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200723462

Subject(s) - sputtering , materials science , thin film transistor , optoelectronics , layer (electronics) , transistor , gate dielectric , thin film , metal , indium , oxide , dielectric , nanotechnology , electrical engineering , metallurgy , engineering , voltage

Thin film transistors with In 2 O 3 channel were fabricated. The channel layer of In 2 O 3 and gate dielectric of Ta 2 O 5 in the device was deposited by reactive sputtering using metal targets. A thin layer of Bi was deposited on the channel and then an‐ nealed to help stabilize the device performance. The device with optimal dose of Bi exhibited a channel mobility of 12 cm 2 /V s. Effects of Bi layer and influence of gate dielectric to the device performance are investigated. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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