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Scaling limits and MHz operation in thiophene‐based field‐effect transistors
Author(s) -
Hoppe A.,
Balster T.,
Muck T.,
Wagner V.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723442
Subject(s) - scaling , transistor , materials science , field effect transistor , optoelectronics , micrometer , semiconductor , thiophene , nanotechnology , electrical engineering , chemistry , physics , engineering , voltage , optics , mathematics , geometry , organic chemistry
Abstract To achieve high performance organic field effect transistors (OFETs) with enhanced currents, high switching speeds and improved integration density the channel length L is downscaled to the sub‐micrometer regime. The influence of important scaling parameters on the electrical performance of bottom contact devices is analyzed. High‐mobility oligo‐ and polythiophenes were used as semiconductor, which combine the advantages of highly ordered growth with processibility from solution. Devices with optimized parameters exhibit high switching frequencies beyond 2 MHz. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)