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Electronic states at the dielectric/semiconductor interface in organic field effect transistors
Author(s) -
Benson Niels,
Melzer Christian,
Schmechel Roland,
Seggern Heinz von
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723421
Subject(s) - pentacene , organic semiconductor , transistor , optoelectronics , dielectric , materials science , field effect transistor , semiconductor , organic field effect transistor , gate dielectric , inverter , insulator (electricity) , cmos , organic electronics , electrical engineering , nanotechnology , voltage , engineering
Abstract Electronic trap states at the interface of the gate insulator and the organic semiconductor play a decisive role for the current–voltage characteristic of organic field effect transistors. In this article two techniques will be introduced which eliminate and generate those trap states on SiO 2 as well as polymer dielectric interfaces, respectively. Employing these interface modifications, p‐ and n‐type pentacene field‐effect transistors as well as an organic CMOS inverter with a single organic semiconductor and a single type of source–drain metallization were engineered. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)