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Structural properties of GaN and Ga 1– x Mn x N layers grown by sublimation sandwich method
Author(s) -
Kaminski M.,
Podsiadlo S.,
Dominik P.,
Mizera J.,
Wozniak M.,
Gebicki W.,
Kamler G.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723420
Subject(s) - sublimation (psychology) , electron microprobe , metalorganic vapour phase epitaxy , materials science , analytical chemistry (journal) , raman spectroscopy , crystallography , microprobe , layer (electronics) , chemistry , mineralogy , epitaxy , nanotechnology , metallurgy , optics , psychology , physics , chromatography , psychotherapist
The structural properties of GaN and Ga 1– x Mn x N layers are reported. The GaN and Ga 1– x Mn x N layers were obtained by the sublimation sandwich method (SSM). Electron microprobe measurements detected high Mn concentration of up to 4.0 at% in Ga 1– x Mn x N materials. Raman investigations demonstrated that the prepared layers had a well‐ordered structure. The densities of dislocations in the template MOCVD layer, SSM GaN layers and SSM Ga 1– x Mn x N layers were 3.9 × 10 8 cm –2 , 1.4 × 10 8 cm –2 and 3.0 × 10 9 cm –2 , respectively. The AFM studies demonstrated that the GaN RMS roughness increased with the increase in thickness. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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