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Carbon nanotube transistors – chemical functionalization and device characterization
Author(s) -
Balasubramanian Kannan,
Lee Eduardo J. H.,
Weitz Ralf Thomas,
Burghard Marko,
Kern Klaus
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723410
Subject(s) - carbon nanotube , nanotechnology , materials science , surface modification , transistor , characterization (materials science) , field effect transistor , photocurrent , carbon nanotube field effect transistor , optoelectronics , electrical engineering , voltage , chemical engineering , engineering
This review presents an overview of the recent progress made in the field of carbon nanotube (CNT)‐based field‐effect transistors (FETs). Starting from the simplest device architectures, various methods reported for fabricating CNT‐FETs are presented. The main focus is laid on the use of chemical functionalization strategies both at a tube and at a device level to improve the performance of the devices. In addition to solid dielectric gate insulators, the use of liquids or solid polymer electrolytes as effective electrochemical gating media is outlined. Following this, device parameters of the various CNT‐FETs are compared and discussed. Finally, the utility of scanning photocurrent microscopy as an efficient characterization tool to estimate electronic band‐profiles of CNT‐FETs is highlighted. The review concludes with future perspectives in this rapidly emerging field. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)