Premium
Crystal growth and optical performance of Nd:Sr 3 Ga 2 Ge 4 O 14 crystals
Author(s) -
Wu Anhua,
Ding Jiaxuan,
Xu Jiayue,
Shen Hui,
Ogawa Takayo,
Wada Satoshi
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723381
Subject(s) - absorption (acoustics) , analytical chemistry (journal) , fluorescence , absorption spectroscopy , materials science , crystal (programming language) , excited state , doping , quenching (fluorescence) , laser diode , ion , single crystal , crystal growth , neodymium , czochralski method , laser , crystallography , diode , chemistry , optics , optoelectronics , atomic physics , physics , organic chemistry , chromatography , computer science , composite material , programming language
Nd:Sr 3 Ga 2 Ge 4 O 14 (Nd:SGG) single crystals up to ∅25 mm × 50 mm were grown by the modified Bridgman method. Absorption and fluorescence spectra of Nd:SGG crystals were measured at room temperature. Compared with Nd:YAG crystals, the absorption of Nd:SGG single crystals presented broad absorption bands of Nd 3+ ions. The fluorescence inten‐ sity increased with Nd concentration while the fluorescence lifetime of the 4 F 3/2 – 4 I 11/2 transition excited by a diode laser at room temperature showed a slight decrease when the Nd concentration increased to 8 at%. The results indicated that the quenching effect might occur in Nd:SGG crystals doped with higher Nd concentrations. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)