Crystal growth and optical performance of Nd:Sr 3 Ga 2 Ge 4 O 14  crystals | Zendy

Wu Anhua | Zendy; Ding Jiaxuan | Zendy; Xu Jiayue | Zendy; Shen Hui | Zendy; Ogawa Takayo | Zendy; Wada Satoshi | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Crystal growth and optical performance of Nd:Sr 3 Ga 2 Ge 4 O 14 crystals

Author(s) -

Wu Anhua,

Ding Jiaxuan,

Xu Jiayue,

Shen Hui,

Ogawa Takayo,

Wada Satoshi

Publication year - 2008

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200723381

Subject(s) - absorption (acoustics) , analytical chemistry (journal) , fluorescence , absorption spectroscopy , materials science , crystal (programming language) , excited state , doping , quenching (fluorescence) , laser diode , ion , single crystal , crystal growth , neodymium , czochralski method , laser , crystallography , diode , chemistry , optics , optoelectronics , atomic physics , physics , organic chemistry , chromatography , computer science , composite material , programming language

Nd:Sr 3 Ga 2 Ge 4 O 14 (Nd:SGG) single crystals up to ∅25 mm × 50 mm were grown by the modified Bridgman method. Absorption and fluorescence spectra of Nd:SGG crystals were measured at room temperature. Compared with Nd:YAG crystals, the absorption of Nd:SGG single crystals presented broad absorption bands of Nd 3+ ions. The fluorescence inten‐ sity increased with Nd concentration while the fluorescence lifetime of the 4 F 3/2 – 4 I 11/2 transition excited by a diode laser at room temperature showed a slight decrease when the Nd concentration increased to 8 at%. The results indicated that the quenching effect might occur in Nd:SGG crystals doped with higher Nd concentrations. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research