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Relationship between grain‐boundary capacitance and bulk shallow donors in SnO 2 polycrystalline semiconductor
Author(s) -
Bueno P. R.,
Santos M. A.,
Ramírez M. A.,
Tararam R.,
Longo E.,
Varela J. A.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723355
Subject(s) - grain boundary , crystallite , capacitance , materials science , ohmic contact , doping , condensed matter physics , semiconductor , crystallography , optoelectronics , chemistry , metallurgy , composite material , physics , microstructure , electrode , layer (electronics)
Abstract The relationship between grain‐boundary capacitance and extrinsic shallow donors caused by Nb addition to SnO 2 ·CoO binary polycrystalline system has been investigated by means of combined techniques such as I – V characteristic response, complex impedance and capacitance analysis and electrostatic force microscopy. The estimated role of the Nb doping is to increase the concentration of shallow donors that are capable of enhancing the electronic donation to grain‐boundary acceptors. This effect leads to the formation of potential barriers at grain boundaries with a simultaneous increase of grain‐boundary capacitance and non‐Ohmic features of the polycrystalline device doped with Nb atoms. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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