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Resistive memory effect in self‐assembled 3‐aminopropyltrimethoxysilane molecular multilayers
Author(s) -
Chauhan A. K.,
Aswal D. K.,
Koiry S. P.,
Padma N.,
Saxena V.,
Gupta S. K.,
Yakhmi J. V.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723329
Subject(s) - hysteresis , materials science , ion , resistive touchscreen , atomic force microscopy , diffraction , nanotechnology , analytical chemistry (journal) , optoelectronics , chemistry , condensed matter physics , optics , electrical engineering , physics , organic chemistry , engineering , chromatography
We have observed a pronounced resistive memory effect with an on/off ratio of ∼2 in 3‐aminopropyltrimethoxysilane (APTMS) molecular multilayers trapped with NH + 3 ions. The APTMS multilayers were deposited on SiO 2 /Si(p ++ ) substrates using a self‐assembly process and characterized using various techniques, such as water contact angle, elliposmetery, X‐ray photoelectron microscopy, X‐ray diffraction and atomic force microscopy. The current–voltage characteristics of Hg/APTMS multilayer/Si(p ++ ) devices, in the negative bias region, exhibited a reproducible hysteresis effect along with a negative differential resistance. A plausible explanation of the observed hysteresis in terms of filling and de‐filling of the positive ion traps is proposed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)