Resistive memory effect in self‐assembled 3‐aminopropyltrimethoxysilane molecular multilayers | Zendy

Chauhan A. K. | Zendy; Aswal D. K. | Zendy; Koiry S. P. | Zendy; Padma N. | Zendy; Saxena V. | Zendy; Gupta S. K. | Zendy; Yakhmi J. V. | Zendy

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Resistive memory effect in self‐assembled 3‐aminopropyltrimethoxysilane molecular multilayers

Author(s) -

Chauhan A. K.,

Aswal D. K.,

Koiry S. P.,

Padma N.,

Saxena V.,

Gupta S. K.,

Yakhmi J. V.

Publication year - 2008

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200723329

Subject(s) - hysteresis , materials science , ion , resistive touchscreen , atomic force microscopy , diffraction , nanotechnology , analytical chemistry (journal) , optoelectronics , chemistry , condensed matter physics , optics , electrical engineering , physics , organic chemistry , engineering , chromatography

We have observed a pronounced resistive memory effect with an on/off ratio of ∼2 in 3‐aminopropyltrimethoxysilane (APTMS) molecular multilayers trapped with NH + 3 ions. The APTMS multilayers were deposited on SiO 2 /Si(p ++ ) substrates using a self‐assembly process and characterized using various techniques, such as water contact angle, elliposmetery, X‐ray photoelectron microscopy, X‐ray diffraction and atomic force microscopy. The current–voltage characteristics of Hg/APTMS multilayer/Si(p ++ ) devices, in the negative bias region, exhibited a reproducible hysteresis effect along with a negative differential resistance. A plausible explanation of the observed hysteresis in terms of filling and de‐filling of the positive ion traps is proposed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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