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Photovoltaic effects in InGaN structures with p–n junctions
Author(s) -
Yang Cuibai,
Wang Xiaoliang,
Xiao Hongling,
Ran Junxue,
Wang Cuimei,
Hu Guoxin,
Wang Xinhua,
Zhang Xiaobin,
Li Jianping,
Li Jinmin
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723202
Subject(s) - materials science , optoelectronics , schottky barrier , open circuit voltage , chemical vapor deposition , diffraction , photovoltaic system , band gap , short circuit , schottky diode , voltage , optics , electrical engineering , physics , diode , engineering
InGaN photovoltaic structures with p–n junctions have been fabricated by metal organic chemical vapour deposition. Using double‐crystal X‐ray diffraction measurements, it was found that the room temperature band gaps of p‐InGaN and n‐InGaN films were 2.7 and 2.8 eV, respectively. Values of 3.4 × 10 –2 mA cm –2 short‐circuit current, 0.43 V open‐circuit voltage and 0.57 fill factor have been achieved under ultraviolet illumination (360 nm), which were related to p–n junction connected back‐to‐back with a Schottky barrier and many defects of the p‐InGaN film. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)