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Vertical defects in heavily Mg‐doped Al 0.69 Ga 0.31 N
Author(s) -
Wu Y.,
Moe C. G.,
Keller S.,
DenBaars S. P.,
Speck J. S.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723195
Subject(s) - doping , transmission electron microscopy , scanning transmission electron microscopy , microstructure , materials science , dark field microscopy , spectroscopy , analytical chemistry (journal) , scanning electron microscope , crystallography , microscopy , chemistry , optics , physics , nanotechnology , optoelectronics , metallurgy , chromatography , quantum mechanics , composite material
The microstructure of p‐type Al 0.69 Ga 0.31 N with high Mg‐doping was studied by conventional transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM). Spike‐like domains were observed with an average diameter of ∼10 nm, height of ∼400 nm and density of 2.2 × 10 11 /cm 2 . These long and narrow domains nucleated about 200 nm above the Mg‐doping boundary and resembled ordinary inversion domains induced by Mg‐doping. However, the energy dispersive X‐ray spectroscopy line‐scan results provided unambiguous evidence that the domains were Ga‐rich. The lateral composition segregation between the domains and surrounded matrix was further confirmed by high angular dark field images in STEM. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)