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Electrical properties of chlorine‐doped ZnO thin films grown by MOCVD
Author(s) -
Chikoidze E.,
Modreanu M.,
Sallet V.,
Gorochov O.,
Galtier P.
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723192
Subject(s) - chlorine , metalorganic vapour phase epitaxy , sapphire , doping , materials science , electron mobility , thin film , electrical resistivity and conductivity , substrate (aquarium) , analytical chemistry (journal) , inorganic chemistry , chemistry , optoelectronics , nanotechnology , epitaxy , layer (electronics) , metallurgy , environmental chemistry , laser , optics , electrical engineering , geology , oceanography , physics , engineering
Chlorine‐doped ZnO thin films were grown by MOCVD on sapphire and fused silica. Chlorine is incorporated in substitution for oxygen and acts as a donor, leading to an increase of electron concentration. Transport properties were studied for samples with different chlorine content. Hall effect measurements show the increase of electron carrier concentration and decrease of electron mobility on increasing the amount of chlorine incorporated in ZnO. Carrier concentrations as high as 6.5 × 10 20 cm –3 has been achieved with a resistivity of ρ = 1.4 × 10 –3 Ω cm for layers deposited on sapphire substrate. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)