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Positron annihilation study of PbWO 4 crystal doped with Y 2 O 3 at different concentration
Author(s) -
Xie Jianjun,
Geng Zhengsong,
Yuan Hui,
Xiong Wei,
Chen Liang,
Ye Chongzhi,
Xu Guoqing,
Hao Xiaopeng,
Zhang Zhiming,
Ma Hongliang,
Gu Mu,
Feng Xiqi,
Liao Jingying
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723189
Subject(s) - vacancy defect , doping , yttrium , positron annihilation , materials science , trapping , ion , annihilation , positron annihilation spectroscopy , positron , crystal (programming language) , spectroscopy , single crystal , analytical chemistry (journal) , atomic physics , crystallography , chemistry , physics , nuclear physics , optoelectronics , electron , ecology , organic chemistry , chromatography , quantum mechanics , computer science , programming language , metallurgy , biology , oxide
A study of vacancy‐related defects in yttrium‐doped PbWO 4 with doping concentration of 0–1 mol% has been performed using X‐ray diffraction and positron annihilation lifetime spectroscopy. It was found that the samples have vacancy‐like defects that act as positron traps. Two main defect lifetime components were found in all samples, one at about 0.195 ns to 0.208 ns and the other about 0.408 ns to 0.735 ns. These defect trapping sites can be attributed to single Pb‐site vacancies and interstitial oxygen ions, respectively. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)