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Liquid phase deposited silicon oxide with lower boron impurity grown on gallium nitride by temperature‐difference method
Author(s) -
Lee MingKwei,
Ho ChenLin,
Zeng JiaYi
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723185
Subject(s) - boric acid , oxide , materials science , silicon oxide , impurity , silicon , analytical chemistry (journal) , deposition (geology) , silicon nitride , boron nitride , phase (matter) , inorganic chemistry , chemistry , nanotechnology , metallurgy , chromatography , organic chemistry , paleontology , sediment , biology
This study investigates the growth of silicon oxide film on gallium nitride using hydrosilicofluoric acid and silica gel by the temperature‐difference liquid‐phase deposition. In the conventional liquid phase deposition, the boric acid is used as fluorine scavenger to prompt silicon oxide deposition and it also acts as an impurity in the oxide film. The better metal–oxide–semiconductor diode electrical characteristics can be obtained by the temperature‐difference method with lower boric acid incorporation and higher deposition rate. Compared with the leakage current density of the conventional and temperature‐difference methods, it can be much improved from 9.93 × 10 –2 A/cm 2 to 5.8 × 10 –4 A/cm 2 at +2 MV/cm and from 1.35 × 10 –2 A/cm 2 to 5.15 × 10 –4 A/cm 2 at –1 MV/cm. The effective oxide charges is improved from 3.88 × 10 11 cm –2 to 2.27 × 10 11 cm –2 . (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)