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Orientation control and ferroelectric properties of (Pb 0.90 La 0.10 )Ti 0.975 O 3 thin films prepared by rf magnetron sputtering with a LaNiO 3 buffer layer
Author(s) -
Wu Jiagang,
Xiao Dingquan,
Tan Junzhe,
Zhu Jumu,
Jin Yong,
Zhu Jianguo,
Zhu Jiliang,
Tian Yunfei
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723114
Subject(s) - lanio , ferroelectricity , materials science , thin film , coercivity , sputter deposition , sputtering , layer (electronics) , analytical chemistry (journal) , polarization (electrochemistry) , dielectric , optoelectronics , composite material , nanotechnology , chemistry , condensed matter physics , physics , chromatography
Highly (110)‐ and (100)‐oriented (Pb 0.90 La 0.10 )Ti 0.975 O 3 (PLT) thin films were deposited on Pt(111)/Ti/SiO 2 /Si(100) and SiO 2 /Si(100) substrates by rf magnetron sputtering with a LaNiO 3 (LNO) buffer layer. The LNO buffer layer plays an important role in the orientation and ferroelectric properties of the PLT thin films. Highly (100)‐oriented PLT thin films deposited on the LNO/SiO 2 /Si(100) substrates are obtained at a low processing temperature of 500 °C. The ferroelectric properties of the PLT thin films with different orientations are discussed. Highly (100)‐oriented PLT thin films possess better ferroelec‐ tric properties, with higher remnant polarization (2 P r = 40.4 μC/cm 2 ) and lower coercive field (2 E c = 201 kV/cm) than that of (110)‐oriented PLT thin films (2 P r = 22.4 μC/cm 2 , 2 E c = 246 kV/cm). The enhanced ferroelectric property is attributed to the different orientations of the PLT thin films. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)