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AlN/GaN heterostructure prepared using a low‐temperature helicon sputtering system
Author(s) -
Wu J. D.,
Chien W. C.,
Kao H. L.,
Chyi J.I.,
Hsu C.H.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723110
Subject(s) - helicon , heterojunction , sputtering , sapphire , materials science , epitaxy , crystallinity , optoelectronics , thin film , analytical chemistry (journal) , nanotechnology , optics , chemistry , plasma , composite material , laser , layer (electronics) , physics , quantum mechanics , chromatography
Single‐crystalline AlN thin films were epitaxially deposited on GaN/sapphire at a low temperature of 300 °C using a helicon sputtering system. The crystallinity of the AlN films and the in‐plane axes relation between the films and substrates were characterized by X‐ray rocking curve and phi‐scan measurements. The two‐dimensional electron gases induced at the AlN/GaN heterojunction were investigated and a sheet carrier concentration up to 1.24 × 10 13 cm –2 was observed by Hall effect measurement. The results justify the attraction of this low temperature grown AlN/GaN heterostructure for use in high‐power, high‐speed and high‐temperature electronics. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)