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Growth of InN crystals with peculiar morphology by means of AP‐HCVD: Computational fluid‐dynamics simulation of the gas flowing in the reactor
Author(s) -
Sugiura H.,
Takahashi N.,
Nakamura T.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723068
Subject(s) - laminar flow , crystal (programming language) , turbulence , scanning electron microscope , morphology (biology) , fluid dynamics , crystal growth , quartz , condensation , materials science , flow (mathematics) , computational fluid dynamics , chemistry , analytical chemistry (journal) , crystallography , mechanics , thermodynamics , composite material , chromatography , physics , computer science , programming language , biology , genetics
Indium nitride crystals were grown by a halide chemical vapor deposition technique under atmospheric pressure. Scanning electron microscopic observation showed that InN crystals have flower‐like morphology with six petals. Computational fluid‐dynamics simulation was applied to study the fluid behavior in a quartz‐tube reactor used for the crystal growth. The obtained results showed that the gas flow was laminar in most areas of the reactor. No turbulent flow was observed in the vicinity of the substrate. The temperature was confirmed as less than 823 ± 0.3 K in the same area. As a result, it is deduced that the precise control of both gas flow and temperature results in the flower‐like InN crystals with high reproducibility. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)