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Determination of activation energies from thermally stimulated currents: application to the CdS crystal containing cupric ions
Author(s) -
Salehi S. M. A.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723056
Subject(s) - ion , conductivity , doping , recombination , electron , single crystal , crystal (programming language) , copper , electrical resistivity and conductivity , trap (plumbing) , materials science , atomic physics , chemistry , analytical chemistry (journal) , molecular physics , crystallography , physics , optoelectronics , metallurgy , computer science , programming language , gene , biochemistry , organic chemistry , chromatography , quantum mechanics , meteorology
Theoretical calculations which take into account thermally stimulated conductivity are presented. The model used has been established for the case of a single type of electron trap, a single type of recombination centre and in the presence of thermally disconnected deep traps . The conductivity relation has been derived and solved numerically in order to determine electron trap depths. It was then tested in the case of CdS single crystals doped with copper ions. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)