Premium
How it really happened: The history of p‐type doping of gallium nitride
Author(s) -
Jain Rakesh B.,
Maruska Herbert Paul
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723044
Subject(s) - gallium nitride , doping , nanotechnology , annealing (glass) , nitride , materials science , gallium , engineering physics , optoelectronics , engineering , metallurgy , layer (electronics)
The first single crystal thin film layers of gallium nitride (GaN) were grown in 1969, but it was not until 1989 that conducting p‐type films of GaN were finally achieved. Many unsuccessful attempts to produce p‐type GaN by annealing techniques including thermal and electron beam annealing were attempted in those intervening twenty years. We discuss here the reason for the early failures, and how the problems were overcome. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) Communicate your view physica status solidi welcomes correspondence related to the articles in its new Historical Review section. If you wish to comment on the developments and topics recounted here from your own perspective, please send an e‐mail to the editor at pss@wiley‐vch.de . (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)