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Monte Carlo simulation of controlled charge carriers diffusion in highly ordered iodine doped pentacene film
Author(s) -
Demeyu L.,
Stafström S.,
Bekele M.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200723043
Subject(s) - pentacene , monte carlo method , doping , organic semiconductor , diffusion , arrhenius equation , materials science , charge (physics) , charge carrier , condensed matter physics , semiconductor , chemistry , analytical chemistry (journal) , physics , nanotechnology , layer (electronics) , thermodynamics , optoelectronics , quantum mechanics , thin film transistor , activation energy , mathematics , statistics , chromatography
We propose and model an experiment where charge carriers in a highly ordered iodine doped two‐dimensional (2D) pentacene (PEN) film layer can be controlled by an external parabolic potential defined by a gate arrangement. The potential has its minimum at the center of the 2D organic semiconductor layer. Calculating the discrete interaction potential numerically, and using the Arrhenius equation modified to include effects of the external and internal fields to calculate time and position dependent probabilities, we carry out Monte Carlo simulations to predict the charge concentration profiles. The positive and negative charge concentration profiles are found to broaden outward and inward respectively with the increase of concentration when the external parabolic potential and the temperature are kept constant. A novel transition from a concentration profile controlled by the external potential to a profile determined by the internal potential is observed for increasing doping concentration. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)