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Numerical simulation of impedance and admittance of OLEDs
Author(s) -
Nguyen N. D.,
Schmeits M.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200690014
Subject(s) - oled , diode , optoelectronics , amplitude , materials science , semiconductor , electron , wavelength , electrical impedance , admittance , physics , optics , nanotechnology , quantum mechanics , layer (electronics)
In this issue's Editor's Choice [1], the electrical characteristics of organic light‐emitting diodes (OLEDs) are calculated for the dc and ac regimes by numerically solving the basic semiconductor equations. The cover picture is taken from a diagram showing the steady‐state electron concentration n 0 and the hole concentration p 0 for an applied voltage V 0 = 3 V as well as the real part of the electron amplitude $ \tilde n $ and the hole amplitude $ \tilde p $ for frequencies of 1 Hz and 10 5 Hz. α‐NPD and Alq 3 molecules being used as active hole‐ and electron‐transporting materials, respectively, are inserted. The first author is working as a postdoctoral fellow for an European project on OLEDs. His current research interests are the transport properties of organic semiconductors, where the conduction mechanisms and the role of traps are studied. This issue also contains a second Editor's Choice entitled “AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths” by Craig G. Moe et al. [2] as well as the Feature Article “p‐type transparent conducting oxides” by Su Sheng, Guojia Fang et al. [3].