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Structural changes in arsenic ion‐implanted Hg 1– x Cd x Te epitaxial layers
Author(s) -
Fodchuk I.,
Zaplitnyy R.,
Kazemirskiy T.,
Swiatek Z.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200675704
Subject(s) - ion , vacancy defect , epitaxy , frenkel defect , arsenic , ion implantation , crystallography , chemistry , atom (system on chip) , materials science , dislocation , analytical chemistry (journal) , stopping power , atomic physics , nanotechnology , metallurgy , physics , organic chemistry , layer (electronics) , chromatography , computer science , embedded system
Results of X‐ray investigations of Hg 1– x Cd x Te ( x = 0.25) epitaxial layers after single and two‐stage arsenic ion implantation with the energy E = 100 keV are represented. It has been established that for doses D 1 = 2 × 10 14 ions/cm 2 and D 2 = (2 × 10 14 + 10 15 ) ions/cm 2 the Frenkel pair (anion vacancy + interstitial mercury atom) generation is the most probable process. The model of a possible system of structural defects in the near‐surface layers of ion‐implanted structures Hg 1– x Cd x Te is proposed. The model allows for the presence of certain dimensions and concentrations of both growth and new defects – the Frenkel pairs, cluster formations and dislocation loops formed under ion radiation. The calculated deformation profiles are complex in shape with characteristic peaks at the depth of maximum nuclear power ion loss. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)