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High resolution X‐ray diffraction analyses of ion‐implanted GaN/AlN/Si heterostructures
Author(s) -
Matyi R. J.,
Jamil M.,
ShahedipourSandvik F.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200675683
Subject(s) - materials science , bragg peak , heterojunction , epitaxy , ion , diffraction , bar (unit) , bragg's law , silicon , ion implantation , buffer (optical fiber) , reflection (computer programming) , crystallography , scattering , resolution (logic) , x ray crystallography , analytical chemistry (journal) , optoelectronics , optics , chemistry , layer (electronics) , nanotechnology , physics , organic chemistry , chromatography , artificial intelligence , meteorology , computer science , programming language , telecommunications , beam (structure)
High resolution triple‐axis X‐ray diffraction has been used to characterize the effects of nitrogen ion implantation into thin (15 nm and 55 nm) AlN buffer layers on the resultant structural quality of nominally 2 μm epitaxial GaN layers grown on silicon substrates. The GaN symmetric (0002) and the asymmetric (10 $ \bar 1 $ 4) and (10 $ \bar 1 $ 5) Bragg reflections shows that in all cases, the extent of the off‐peak kinematic diffuse scattering was reduced when growth was performed on the ion‐implanted AlN buffer layers. Analysis of the log I – log q dependence of the kinematic intensity shows linear behavior but with slopes changing from –4.3 to –3.7 (in the case of the (0002) reflection) in the unimplanted and ion‐implanted buffer layers, respectively, indicating a change in the defect character in the layers. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)