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Features of dislocation images reconstructed from step‐scanned white X‐ray section topographs
Author(s) -
Kajiwara Kentaro,
Kawado Seiji,
Iida Satoshi,
Suzuki Yoshifumi,
Chikaura Yoshinori
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200675677
Subject(s) - dislocation , x ray , crystal (programming language) , materials science , section (typography) , reflection (computer programming) , silicon , optics , cross section (physics) , physics , condensed matter physics , optoelectronics , computer science , quantum mechanics , programming language , operating system
We have observed dislocations in a CZ‐silicon crystal using step‐scanning white X‐ray section topography and examined the feature of the dislocation images reconstructed by stacking 200 shots of sec‐ tion topographs. These topographs were obtained from symmetric 004‐reflection in the Laue case using 20, 30, and 60 keV X‐rays. Direct images, intermediary images, and dynamical images of dislocations were observed in a tomogram, i.e., a sliced image obtained from the stacked section topographs, and the contrast of the dynamical images was reduced with increasing X‐ray energy. The stacked section topographs provided three‐dimensional images of the dislocations based on the direct images, and the sliced image enabled us to observe the dislocations separately in a highly dislocated region of the CZ‐silicon crystal. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)