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Determination of stress distribution in III–V single crystal layers for heterogeneous integration applications
Author(s) -
Jackson M.,
Goorsky M. S.,
Noori A.,
Hayashi S.,
Sandhu R.,
Poust B.,
ChangChien P.,
GutierrezAitken A.,
Tsai R.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200675675
Subject(s) - wafer , materials science , superposition principle , diffraction , substrate (aquarium) , residual stress , stress (linguistics) , curvature , silicon , thermal expansion , crystal (programming language) , composite material , deformation (meteorology) , optics , optoelectronics , geometry , geology , linguistics , oceanography , physics , philosophy , mathematics , quantum mechanics , computer science , programming language
Double crystal X‐ray diffraction imaging and a variable temperature stage are employed to determine the stress distribution in heterogeneous wafer bonded layers though the superposition of images produced at different rocking curve angles. The stress distribution in InP layers transferred to a silicon substrate at room temperature exhibits an anticlastic deformation, with different regions of the wafer experiencing different signs of curvature. Measurements at elevated temperatures (≤125 °C) reveals that differences in thermal expansion coefficients dominate the stress and that interfacial particulates introduce very high local stress gradients that increase with increased temperature. For thinned GaAs substrates (100 μm) bonded using patterned metal interlayers to a separate GaAs substrate at ≈200 °C, residual stresses are produced at room temperature due to local stress points from metallization contacts and vias and the complex stress patterns can be observed using the diffraction imaging technique. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)