Premium
Synchrotron X‐ray Renninger scanning for studying strain in InAs/GaAs quantum dot system
Author(s) -
Freitas Raul O.,
Lamas Tomás E.,
Quivy Andre A.,
Morelhão Sérgio L.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200675673
Subject(s) - quantum dot , expansive , synchrotron , materials science , strain (injury) , scanning electron microscope , diffraction , crystallography , x ray , lattice (music) , gallium arsenide , atomic force microscopy , condensed matter physics , nanotechnology , optoelectronics , chemistry , optics , physics , composite material , medicine , acoustics , compressive strength
A systematic procedure for ultra‐precise lattice parameter determination using X‐ray Renninger scanning (XRS) is optimized and applied to probe the average in‐plane strain in series of samples representing the different stages of the growth process of single‐buried quantum dots (QDs). Covering InAs QDs growth on GaAs(001) substrates generates an expansive in‐plane strain that is related to the density of QDs. Rocking curves and atomic force microscopy are also used for a general qualitative analysis of the growths, as well as of the morphology and density of the QDs. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)