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White X‐ray beam topography and radiography of Si 1– x Ge x crystals bonded to silicon
Author(s) -
Argunova T. S.,
Yi J. M.,
Jung J. W.,
Je J. H.,
Sorokin L. M.,
Gutkin M. Yu.,
Belyakova E. I.,
Kostina L. S.,
Zabrodskii A. G.,
Abrosimov N. V.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200675667
Subject(s) - materials science , wafer , crystallography , germanium , dislocation , annealing (glass) , silicon , nucleation , heterojunction , x ray , optics , composite material , optoelectronics , chemistry , organic chemistry , physics
The defect structure of Si 1– x Ge x wafers with 4% of germanium and their interfaces with Si wafers were studied using white radiation topography and phase‐sensitive radiography. The heterostructures were manufactured by direct bonding of Si 1– x Ge x and Si crystalline wafers made of bulk crystals that were grown by the Czochralski technique. In Si 1– x Ge x crystals, the segregations of Ge act as dislocation nucleation sites. In Si 1– x Ge x /Si bonded structures, the segregation of Ge as well as the accumulation of dislocations induce elastic strain and plastic deformation during high‐temperature bonding annealing. With the topography–radiography combination, we are able not only to detect microcracks, indicating nonbonded areas, by radiography, but also to reveal dislocations and long‐range strain fields by topography at the same time. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)