Premium
High‐resolution X‐ray diffraction study of CZ‐grown GaAsP crystals
Author(s) -
Kowalski G.,
Gronkowski J.,
Czyżak A.,
Słupiński T.,
Borowski J.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200675660
Subject(s) - reciprocal lattice , diffraction , tellurium , homogeneity (statistics) , x ray , lattice (music) , crystallography , x ray crystallography , materials science , optics , lattice constant , physics , chemistry , mathematics , statistics , acoustics , metallurgy
We report results of X‐ray investigations of tellurium‐doped GaAs 1– x P x (with 0.07 ≤ x ≤ 0.20) single crystals, conducted in order to support finding proper growth parameters which would yield a material of sufficient homogeneity of the lattice parameter for prospective applications. Our samples were studied using high‐resolution diffractometry which allowed to obtain both rocking curves and reciprocal space maps of the diffracted intensity, as well as using plane‐wave topography in the reflection mode. Weak reflections were also used to study the influence of Te atoms on the compound lattice. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)