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High‐stress plasticity and the core structures of dislocations in silicon
Author(s) -
Rabier J.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200675456
Subject(s) - silicon , dislocation , core (optical fiber) , plasticity , stress (linguistics) , materials science , partial dislocations , condensed matter physics , dislocation creep , deformation (meteorology) , crystallography , physics , composite material , chemistry , metallurgy , philosophy , linguistics
The recent observation of perfect dislocations at high stress and low temperature in silicon [J. Rabier, P. Cordier, J. L. Demenet, and H. Garem, Mater. Sci. Eng. A 309/310 , 74 (2001)] in accordance with the calculations of Duesbery and Joos [M. S. Duesbery and B. Joos, Philos. Mag. A 74 , 253 (1996)] has solved the apparent paradox regarding the nature of mobile dislocations in silicon under usual deformation conditions. However, although several experiments and calculations are consistent with those perfect dislocations being located in the shuffle set, little is known about the actual core structure of those dislocations which lie along unusual Peierls valleys: 〈112〉/30°, 〈123〉/41°. This paper aims to review and discuss recent results related to high‐stress plasticity and dislocation core structure in silicon. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)