Possible formation mechanisms for surface defects observed in heteroepitaxially grown 3C‐SiC

p–n diodes were fabricated from 3C‐SiC films heteroepitaxially grown atop on‐axis, Si‐face (0001) 4H‐SiC mesa substrate arrays [P. G. Neudeck et al., Mater. Sci. Forum 433–436 , 213 (2003); 527–529 , 1335 (2006)]. Images taken by electroluminescence‐based optical emission microscopy (ELOEM) and electron channelling contrast imaging (ECCI) revealed immobile linear features aligned along 〈110〉 directions; defects were expected on these particular devices, as the 3C films were grown on stepped 4H mesas. To explain the formation of these defects, we have used a procedure by which surface energies are calculated for terraces on a stepped 4H, Si‐face surface to investigate their comparative stability; subsequently, we use energetic calculations to confirm the formation – and determine the orientation – of 3C nuclei on the more stable 4H terraces and to evaluate the nature of the coalescence of nuclei from neighbouring terraces. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)