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Spontaneous growth of uniformly distributed In nanodots and InI 3 nanowires on InP induced by a focused ion beam
Author(s) -
Callegari Victor,
Nellen Philipp M.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200675337
Subject(s) - nanodot , nanowire , nucleation , gallium , materials science , focused ion beam , substrate (aquarium) , nanotechnology , ion , nanostructure , optoelectronics , sputtering , facet (psychology) , chemistry , thin film , metallurgy , oceanography , organic chemistry , geology , social psychology , psychology , personality , big five personality traits
We show the growth of hemispherical In nanodots due to differential sputtering by 30 keV gallium (Ga + ) ions and of InI 3 nanodots and nanowires due to chemical reactions with iodine on the surface of focused ion beam‐irradiated areas on a (100)InP substrate. Growth occurs exclusively on previously FIB‐fabricated nucleation‐sites in the form of craters and trenches. Surface topography and the native oxide on InP are identified as the factors determining the area of growth. Arbitrary 2D patterns can be generated with good control of localization and dimension of the nanostructures. Limitations of size and surface density of the nanodots and nanowires are discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)