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Transistor with organic emitter and electrodeposited Au base
Author(s) -
Delatorre R. G.,
Munford M. L.,
Zhou Q.,
Pasa A. A.,
Schwarzacher W.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200675202
Subject(s) - common emitter , transistor , base (topology) , electrolyte , layer (electronics) , materials science , optoelectronics , base metal , metal , heterostructure emitter bipolar transistor , bipolar junction transistor , nanotechnology , electrode , chemistry , electrical engineering , metallurgy , voltage , engineering , mathematical analysis , mathematics , welding
In this work we present results from a metal‐base transistor consisting of organic C 60 as emitter, an ultra‐thin Au as base and n‐Si as collector. The Au layer was directly electrodeposited on the n‐Si surface from a commercial electrolyte containing K 2 SO 3 and Au sulphite complexes. The fullerene emitter was subsequently evaporated on top of the Au layer. For a base thickness of 10 nm the common‐base current gain is close to 1, which is a strong evidence that the transistor is a permeable base device. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)