Transistor with organic emitter and electrodeposited Au base | Zendy

Delatorre R. G. | Zendy; Munford M. L. | Zendy; Zhou Q. | Zendy; Pasa A. A. | Zendy; Schwarzacher W. | Zendy

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Transistor with organic emitter and electrodeposited Au base

Author(s) -

Delatorre R. G.,

Munford M. L.,

Zhou Q.,

Pasa A. A.,

Schwarzacher W.

Publication year - 2007

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200675202

Subject(s) - common emitter , transistor , base (topology) , electrolyte , layer (electronics) , materials science , optoelectronics , base metal , metal , heterostructure emitter bipolar transistor , bipolar junction transistor , nanotechnology , electrode , chemistry , electrical engineering , metallurgy , voltage , engineering , mathematical analysis , mathematics , welding

In this work we present results from a metal‐base transistor consisting of organic C 60 as emitter, an ultra‐thin Au as base and n‐Si as collector. The Au layer was directly electrodeposited on the n‐Si surface from a commercial electrolyte containing K 2 SO 3 and Au sulphite complexes. The fullerene emitter was subsequently evaporated on top of the Au layer. For a base thickness of 10 nm the common‐base current gain is close to 1, which is a strong evidence that the transistor is a permeable base device. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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