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High‐ f max GaN HEMT with high breakdown voltage over 100 V for millimeter‐wave applications
Author(s) -
Makiyama Kozo,
Ohki Toshihiro,
Kanamura Masahito,
Imanishi Kenji,
Hara Naoki,
Kikkawa Toshihide
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200674881
Subject(s) - high electron mobility transistor , extremely high frequency , amplifier , optoelectronics , materials science , schottky diode , breakdown voltage , transistor , millimeter , oscillation (cell signaling) , high voltage , voltage , electrical engineering , physics , diode , engineering , chemistry , optics , biochemistry , cmos
This paper discusses the technology of state‐of‐the‐art GaN high electron mobility transistors (GaN‐HEMTs) used for millimeter‐wave amplifiers. A high maximum frequency of oscillation ( f max ) device with high breakdown voltage ( BV gd ) was focused on to improve the gain and efficiency of a millimeter‐wave amplifier. In this study, we demonstrated a high f max of 210 GHz with a BV gd of over 100 V using a novel Y‐shaped Schottky‐gate and GaN‐cap structure, for the first time. The effect of the AlGaN layer and the device dimensions were investigated to obtain a highly reliable millimeter‐wave power amplifier. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)