High‐ f  max  GaN HEMT with high breakdown voltage over 100 V for millimeter‐wave applications | Zendy

Makiyama Kozo | Zendy; Ohki Toshihiro | Zendy; Kanamura Masahito | Zendy; Imanishi Kenji | Zendy; Hara Naoki | Zendy; Kikkawa Toshihide | Zendy

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High‐ f max GaN HEMT with high breakdown voltage over 100 V for millimeter‐wave applications

Author(s) -

Makiyama Kozo,

Ohki Toshihiro,

Kanamura Masahito,

Imanishi Kenji,

Hara Naoki,

Kikkawa Toshihide

Publication year - 2007

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200674881

Subject(s) - high electron mobility transistor , extremely high frequency , amplifier , optoelectronics , materials science , schottky diode , breakdown voltage , transistor , millimeter , oscillation (cell signaling) , high voltage , voltage , electrical engineering , physics , diode , engineering , chemistry , optics , biochemistry , cmos

This paper discusses the technology of state‐of‐the‐art GaN high electron mobility transistors (GaN‐HEMTs) used for millimeter‐wave amplifiers. A high maximum frequency of oscillation ( f max ) device with high breakdown voltage ( BV gd ) was focused on to improve the gain and efficiency of a millimeter‐wave amplifier. In this study, we demonstrated a high f max of 210 GHz with a BV gd of over 100 V using a novel Y‐shaped Schottky‐gate and GaN‐cap structure, for the first time. The effect of the AlGaN layer and the device dimensions were investigated to obtain a highly reliable millimeter‐wave power amplifier. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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