Premium
High‐quality SiO 2 /GaN interface for enhanced operation field‐effect transistor
Author(s) -
Niiyama Yuki,
Shinagawa Tatsuyuki,
Ootomo Shinya,
Kambayashi Hiroshi,
Nomura Takehiko,
Yoshida Seikoh
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200674844
Subject(s) - annealing (glass) , materials science , capacitor , conduction band , optoelectronics , transistor , interface (matter) , semiconductor , oxide , mosfet , electrical engineering , voltage , physics , engineering , composite material , metallurgy , electron , quantum mechanics , capillary number , capillary action
The interface quality in GaN metal–oxide–semiconductor (MOS) capacitors was dramatically improved by annealing after SiO 2 deposition. The interface state density ( D it ) of samples annealed at 900–1000 °C was estimated to be ∼2 × 10 11 cm –2 eV –1 at 0.2 eV under the conduction band based on the calculation of the Terman method. Using this SiO 2 , it is expected that GaN MOSFETs can be operated. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom