Premium
Blue–green–red LEDs based on InGaN quantum dots grown by plasma‐assisted molecular beam epitaxy
Author(s) -
Xu Tao,
Nikiforov A. Yu,
France Ryan,
Thomidis Christos,
Williams Adrian,
Moustakas T. D.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200674834
Subject(s) - light emitting diode , electroluminescence , cathodoluminescence , molecular beam epitaxy , quantum dot , optoelectronics , materials science , diode , quantum well , layer (electronics) , epitaxy , optics , luminescence , nanotechnology , physics , laser
Self‐assembled InGaN quantum dots were grown in the Stranski–Krastanov mode by plasma‐assisted molecular beam epitaxy. The average dot height, diameter and density are 3 nm, 30 nm and 7 × 10 10 cm –2 , respectively. The dot density was found to decrease as the growth temperature increases. The cathodoluminescence emission peak of the InGaN/GaN multiple layer quantum dots (MQDs) was found to red shift 330 meV with respect to the emission peak of the uncapped single layer of InGaN QDs due to Quantum Confined Stark effect. Blue LEDs based on InGaN/GaN multiple quantum wells (MQWs) as well as green and red LEDs based on InGaN MQDs emitting at 440, 560 and 640 nm, respectively, were grown and fabricated. The electroluminescence peak positions of both the green and red InGaN MQD LEDs are shown to be more blue‐shifted with increasing injection current than that of the blue InGaN/GaN MQW LEDs. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)