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Over 55 A, 800 V high power AlGaN/GaN HFETs for power switching application
Author(s) -
Ikeda Nariaki,
Kato Kazuo,
Kondoh Kazuo,
Kambayashi Hiroshi,
Li Jiang,
Yoshida Seikoh
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200674822
Subject(s) - ohmic contact , materials science , optoelectronics , silicide , molybdenum , breakdown voltage , voltage , power (physics) , power semiconductor device , mosfet , power mosfet , electrical engineering , transistor , nanotechnology , silicon , physics , metallurgy , engineering , layer (electronics) , quantum mechanics
We developed new ohmic electrodes combined with an Al‐silicide and a molybdenum for AlGaN/GaN HFETs to realize a high power switching application. As a result, the maximum drain current of the HFET was over 55 A and the breakdown voltage was about 800 V. The specific on‐state resistance of the HFET was smaller than that of a Si Cool MOSFET. Furthermore, we examined the dynamic characteristics. The turn‐off and turn‐on delay time were 14.8 nsec. and 8.4 nsec. at the condition of 100 V, respectively. These values were considerbly smaller compared with those of Si Cool MOSFETs. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)