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One‐step lateral growth for reduction in defect density of a ‐plane GaN on r ‐sapphire substrate and its application in light emitters
Author(s) -
Iida D.,
Miura A.,
Okadome Y.,
Tsuchiya Y.,
Kawashima T.,
Nagai T.,
Iwaya M.,
Kamiyama S.,
Amano H.,
Akasaki I.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200674810
Subject(s) - dislocation , sapphire , epitaxy , materials science , stacking fault , optoelectronics , substrate (aquarium) , light emitting diode , plane (geometry) , threading (protein sequence) , optics , nanotechnology , chemistry , composite material , geometry , physics , laser , biochemistry , oceanography , mathematics , layer (electronics) , protein structure , geology
Low defect density a ‐plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technology. Using this technology, a ‐plane GaN films with atomically flat surface were grown. The threading dislocation and stacking fault densities in the overgrown regions were lower than 10 6 cm −2 and 10 3 cm −1 , respectively. We also fabricated and characterized a ‐plane‐GaN‐based LEDs using SELO technology. The light output power of a blue‐green LED was shown to monotonically increase with decreasing of threading dislocation density. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)