One‐step lateral growth for reduction in defect density of  a  ‐plane GaN on  r  ‐sapphire substrate and its application in light emitters | Zendy

Iida D. | Zendy; Miura A. | Zendy; Okadome Y. | Zendy; Tsuchiya Y. | Zendy; Kawashima T. | Zendy; Nagai T. | Zendy; Iwaya M. | Zendy; Kamiyama S. | Zendy; Amano H. | Zendy; Akasaki I. | Zendy

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One‐step lateral growth for reduction in defect density of a ‐plane GaN on r ‐sapphire substrate and its application in light emitters

Author(s) -

Iida D.,

Miura A.,

Okadome Y.,

Tsuchiya Y.,

Kawashima T.,

Nagai T.,

Iwaya M.,

Kamiyama S.,

Amano H.,

Akasaki I.

Publication year - 2007

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200674810

Subject(s) - dislocation , sapphire , epitaxy , materials science , stacking fault , optoelectronics , substrate (aquarium) , light emitting diode , plane (geometry) , threading (protein sequence) , optics , nanotechnology , chemistry , composite material , geometry , physics , laser , biochemistry , oceanography , mathematics , layer (electronics) , protein structure , geology

Low defect density a ‐plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technology. Using this technology, a ‐plane GaN films with atomically flat surface were grown. The threading dislocation and stacking fault densities in the overgrown regions were lower than 10 6 cm −2 and 10 3 cm −1 , respectively. We also fabricated and characterized a ‐plane‐GaN‐based LEDs using SELO technology. The light output power of a blue‐green LED was shown to monotonically increase with decreasing of threading dislocation density. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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