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High‐efficiency AlGaN based UV emitters grown on high‐crystalline‐quality AlGaN using grooved AlN layer on sapphire substrate
Author(s) -
Iida K.,
Watanabe H.,
Takeda K.,
Nagai T.,
Sumii T.,
Nagamatsu K.,
Kawashima T.,
Balakrishnan K.,
Iwaya M.,
Kamiyama S.,
Amano H.,
Akasaki I.,
Bandoh A.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200674809
Subject(s) - materials science , sapphire , light emitting diode , optoelectronics , layer (electronics) , dislocation , substrate (aquarium) , diode , wavelength , quality (philosophy) , optics , laser , composite material , philosophy , oceanography , physics , epistemology , geology
Crack‐free and low‐dislocation‐density AlGaN was successfully grown on grooved AlN layer. UV light‐emitting diodes (LEDs) with a peak wavelength of 330 nm on these AlGaN films were fabricated. The efficiency of the UV LEDs is found to be strongly affected by the crystalline quality of the underlying AlN. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)